BSP135 H6327 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies BSP135 H6327
- Power Dissipation (Pd): 1.8W
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 120mA
- Gate Threshold Voltage (Vgs(th)@Id): 1V@94uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 45Ω@10V,120mA
- Package: SOT-223-4
- Manufacturer: Infineon Technologies
